H01L27/02- Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier including integrated passive circuit elements with at least one potential-jump barrier or surface barrier.H01L27/00- Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate.H01L- SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG Priority to US12/109,976 priority Critical patent/US7964460B2/en Publication of US20080233694A1 publication Critical patent/US20080233694A1/en Priority to US13/109,391 priority patent/US8669154B2/en Application granted granted Critical Publication of US7964460B2 publication Critical patent/US7964460B2/en Priority to US13/846,641 priority patent/US8685814B2/en Priority to US14/194,175 priority patent/US9000531B2/en Status Active legal-status Critical Current Anticipated expiration legal-status Critical Links Original Assignee Infineon Technologies AG Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) ( en Inventor Hong-Jyh Li Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Active Application number US12/109,976 Other versions US20080233694A1 ![]() Google Patents Method of manufacturing an NMOS device and a PMOS deviceĭownload PDF Info Publication number US7964460B2 US7964460B2 US12/109,976 US10997608A US7964460B2 US 7964460 B2 US7964460 B2 US 7964460B2 US 10997608 A US10997608 A US 10997608A US 7964460 B2 US7964460 B2 US 7964460B2 Authority US United States Prior art keywords region gate gate dielectric workpiece disposed over Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US7964460B2 - Method of manufacturing an NMOS device and a PMOS device NMOS devices can be switched faster compared to PMOS devices.US7964460B2 - Method of manufacturing an NMOS device and a PMOS device NMOS devices are comparatively smaller compared with PMOS devices with complimentary conducting properties. In PMOS, the majority carriers are holes. In NMOS, the majority carriers are electrons. In PMOS, the source and the drain are made of p-type semiconductors while the bulk is made of an n-type semiconductor. In NMOS, the source and the drain are made of n-type semiconductors while the bulk is made of a p-type semiconductor. Difference Between NMOS and PMOS Fabrication: Holes flow much more slowly compared to electrons, therefore it is much easier to control the current. When a negative voltage is applied to the gate, the electrons get repelled and so holes are able to form a channel and travel between the source and the drain. In PMOS devices, the source and the drain are made of p-type material while the bulk is made of n –type semiconductors. This gives a disadvantage to NMOSs because the accumulation of these contaminants around the gate could turn an NMOS device on when it is supposed to be off. Most of the contaminants in MOSFETs are positively-charged. For instance, NMOS had been used for logic gates, although nowadays they have been largely replaced by “CMOSs” which contain a combination of NMOS and PMOS. Since electrons are faster than holes, NMOSs are also more useful in fast-switching applications. Consequently, NMOS are cheaper to produce than PMOS as well. ![]() As a result, NMOS transistors are smaller than corresponding PMOS devices. The majority carriers in NMOS devices are electrons, and they can flow much faster than holes.
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